Wide bandgap semiconductors

We are strengthening our role in the development of solid-state quantum systems, such as optical active spin quantum bits, quantum memories and registers.

These are basic elements required for various applications in quantum technologies, e.g. long-distance quantum communications, quantum sensing and quantum computing. Our expertise extends from materials science, which includes design and growth of quantum-grade materials (SiC, III-nitrides and other semiconductors) and structures for nanophotonic and other quantum devices, to characterization, control and manipulation of optical spin qubits.

We also develop MOCVD of group III nitrides, particularly ultra-wide bandgap AlN, and resolve doping issues. We further develop group III nitrides at the 2D limit by leading predictive theoretical modeling and MOCVD approaches and explore new material performance for electronics at nanoscale.

Publications

2025

Issam Belgacem, Pasquale Cilibrizzi, Muhammad Junaid Arshad, Daniel White, Malte Kroj, Christiaan Bekker, Margherita Mazzera, Brian D. Gerardot, Angelo C. Frangeskou, Gavin W. Morley, Son Tien Nguyen, Jawad Ul-Hassan, Takeshi Ohshima, Hiroshi Abe, Lorenzo Vinco, Dario Polli, Giulio Cerullo, Cristian Bonato (2025) OPTICA QUANTUM, Vol. 3, p. 335-345 (Article in journal)

Jannis Hessenauer, Jonathan Koerber, Misagh Ghezellou, Jawad Ul-Hassan, Georgy V. Astakhov, Wolfgang Knolle, Joerg Wrachtrup, David Hunger (2025) OPTICA QUANTUM, Vol. 3, p. 175-181 (Article in journal)

Danial Shafizadeh, Joel Davidsson, Takeshi Ohshima, Son Tien Nguyen, Ivan Gueorguiev Ivanov (2025) Applied Physics Letters, Vol. 127, Article 054003 (Article in journal)

Galia Pozina, Hsu Chih-Wei, Natalia Abrikossova, Carl Hemmingsson (2025) Journal of Crystal Growth, Vol. 668, Article 128289 (Article in journal)

Timo Steidl, Pierre Kuna, Erik Hesselmeier-Huttmann, Di Liu, Rainer Stohr, Wolfgang Knolle, Misagh Ghezellou, Jawad Ul-Hassan, Maximilian Schober, Michel Bockstedte, Guodong Bian, Gali Adam, Vadim Vorobyov, Joerg Wrachtrup (2025) Nature Communications, Vol. 16, Article 4669 (Article in journal)

Mattias Jansson, Valentyna Nosenko, Carl Hemmingsson, Galia Pozina, Fumitaro Ishikawa, Weimin Chen, Irina Buyanova (2025) Journal of Applied Physics, Vol. 137, Article 205703 (Article in journal)

Danial Shafizadeh (2025)

Hui Zeng, Satoru Yoshioka, Weimin Wang, Zhongyuan Han, Ivan Gueorguiev Ivanov, Hongwei Liang, Vanya Darakchieva, Jianwu Sun (2025) Journal of the American Chemical Society, Vol. 147, p. 14815-14823 (Article in journal)

Danial Shafizadeh, Son Tien Nguyen, Igor Abrikosov, Ivan Gueorguiev Ivanov (2025) Physical Review B, Vol. 111, Article 165201 (Article in journal)

Misagh Ghezellou, Jawad Ul-Hassan (2025) Journal of Crystal Growth, Vol. 661, Article 128165 (Article in journal)

Contact

Head of unit

Placeholder for missing image of Ivan Gueorguiev Ivanov

Staff

Principal Research Engineer

Misagh Ghezellou

Postdoc

Carl Hemmingsson

Senior Associate Professor

Per-Olof Holtz

Professor Emeritus

Ivan Gueorguiev Ivanov

Senior Associate Professor, Head of Division, Head of Unit

Leif Johansson

Professor Emeritus

Son Phuong Le

Principal Research Engineer

LiU-UFBA network

The LiU-UFBA network is a research and education network in materials science based in 福利姬 (Sweden) and Federal University of Bahia (Brazil).

Organisation

A light-green thin sheet is immersed in water.

Semiconductor Materials (HALV)

Our division develops and investigates materials for novel electronics with the main focus on silicon carbide, III-nitrides and graphene.

Department of Physics, Chemistry and Biology (IFM)

Excellent undergraduate teaching and research in the areas of biology, chemistry, materials and applied physics and theory and modelling are conducted at this department.

福利姬